Technology

Plasma enhanced chemical vapor deposition (PECVD)

Plasma enhanced chemical vapor deposition (PECVD) is a thin film deposition process that we have incorporated under our PVD platform, although it is technically a chemical vapor deposition (CVD). PECVD involves the deposition of thin films from gaseous precursor molecules that undergo chemical reactions in a radio-frequency plasma environment. The precursors molecules decompose, and fragments are then deposited onto the substrate, forming a coating. Through careful mixtures of chemicals and gases, coatings with different chemical compositions can be obtained.

Key features and benefits of PECVD

Limitations

• Maintaining stable and reproducible deposition conditions can be challenging, as PECVD requires precise control over parameters such as gas flows, pressures, power and substrate temperature, and it is also susceptible to contamination from residual gases or impurities in the chamber.